A solution in 3 dimensions for current in a semiconductor under high level injection from a point contact
Abstract
The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements of a single point breakdown in an ultrathin dielectric. It was found that the minority carrier injection level was about 70%.
- Publication:
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arXiv e-prints
- Pub Date:
- March 2008
- DOI:
- 10.48550/arXiv.0803.3599
- arXiv:
- arXiv:0803.3599
- Bibcode:
- 2008arXiv0803.3599D
- Keywords:
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- Condensed Matter - Other
- E-Print:
- 2 pages, 1 figure, 28th International Conference on the Physics of Semiconductors, Vienna, 24-28 July 2006