Specific heat and electronic states of superconducting boron-doped silicon carbide
Abstract
The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 [Ekimov , Nature (London)NATUAS10.1038/nature02449 428, 542 (2004)] and silicon (Si:B) in 2006 [Bustarret , Nature (London)NATUAS10.1038/nature05340 444, 465 (2006)] have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we discovered superconductivity in the closely related “mixed” system heavily boron-doped silcon carbide (SiC:B) [Ren , J. Phys. Soc. Jpn.JUPSAU10.1143/JPSJ.76.103710 76, 103710 (2007)]. Interestingly, the latter compound is a type-I superconductor whereas the two aforementioned materials are type II. In this paper, we present an extensive analysis of our recent specific-heat study, as well as the band structure and expected Fermi surfaces. We observe an apparent quadratic temperature dependence of the electronic specific heat in the superconducting state. Possible reasons are a nodal gap structure or a residual density of states due to nonsuperconducting parts of the sample. The basic superconducting parameters are estimated in a Ginzburg-Landau framework. We compare and discuss our results with those reported for C:B and Si:B. Finally, we comment on possible origins of the difference in the superconductivity of SiC:B compared to the two “parent” materials C:B and Si:B.
- Publication:
-
Physical Review B
- Pub Date:
- July 2008
- DOI:
- 10.1103/PhysRevB.78.024517
- arXiv:
- arXiv:0803.1026
- Bibcode:
- 2008PhRvB..78b4517K
- Keywords:
-
- 74.25.Bt;
- 74.62.Dh;
- 74.70.-b;
- 74.70.Ad;
- Thermodynamic properties;
- Effects of crystal defects doping and substitution;
- Superconducting materials;
- Metals;
- alloys and binary compounds;
- Condensed Matter - Superconductivity
- E-Print:
- 9 pages, 7 figures, 2 tables, submitted to Phys. Rev. B