Gold nanoparticle-pentacene memory transistors
Abstract
We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22V) and on/off drain current ratio of ∼3×104 are obtained. The hole field-effect mobility of the transistor is similar in the on and off states (less than a factor of 2). Charge retention times up to 4500s are observed. The memory effect is mainly attributed to the Au nanoparticles.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2008
- DOI:
- 10.1063/1.2896602
- arXiv:
- arXiv:0802.2633
- Bibcode:
- 2008ApPhL..92j3314N
- Keywords:
-
- 85.30.Tv;
- Field effect devices;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1063/1.2896602