Spin-dependent processes at the crystalline Si-SiO2 interface at high magnetic fields
Abstract
An experimental study on the nature of spin-dependent excess charge-carrier transitions at the interface between (111)-oriented phosphorous-doped ([P]≈1015cm-3) crystalline silicon and silicon dioxide at high magnetic field (B0≈8.5T) is presented. Electrically detected magnetic-resonance (EDMR) spectra of the hyperfine split P31 donor-electron transitions and paramagnetic interface defects were conducted at temperatures in the range of 3K≤T≤12K . The results at these previously unattained (for EDMR) magnetic-field strengths reveal the dominance of spin-dependent processes that differ from the previously well investigated recombination between the P31 donor and the Pb state, which dominates at low magnetic fields. While magnetic resonant current responses due to P31 and Pb states are still present, they do not correlate and only the Pb contribution can be associated with an interface process due to spin-dependent tunneling between energetically and physically adjacent Pb states. This work provides an experimental demonstration of spin-dependent tunneling between physically adjacent and identical electronic states as proposed by Kane [Nature (London) 393, 133 (1998)] for readout of donor qubits.
- Publication:
-
Physical Review B
- Pub Date:
- July 2008
- DOI:
- 10.1103/PhysRevB.78.045303
- arXiv:
- arXiv:0802.0230
- Bibcode:
- 2008PhRvB..78d5303M
- Keywords:
-
- 76.30.-v;
- 71.55.Cn;
- 73.40.Qv;
- Electron paramagnetic resonance and relaxation;
- Elemental semiconductors;
- Metal-insulator-semiconductor structures;
- Condensed Matter - Other;
- Condensed Matter - Materials Science
- E-Print:
- 10 pages, 4 figures