Nanogranular metallic Fe oxygen deficient TiO2-δ composite films: a room temperature, highly carrier polarized magnetic semiconductor
Abstract
Nanogranular metallic iron (Fe) and titanium dioxide (TiO2-δ) were sequentially deposited on (100) lanthanum aluminate (LaAlO3) substrates in a low oxygen chamber pressure using a pulsed laser ablation deposition (PLD) technique. By sequential deposition, ≈10 nm diameter metallic Fe spherical grains were suspended within a TiO2-δ matrix. The films show ferromagnetic behavior with a saturation magnetization of 3100 G at room temperature. Our estimate of the saturation magnetization based on the size and distribution of the Fe spheres agreed with the measured value. The film composite structure was characterized as a p-type magnetic semiconductor at 300 K with a carrier density of the order of ≈1022 cm-3. The hole carriers were excited at the interface between the nanogranular Fe and TiO2-δ matrix, similar to holes excited in the metal/n-type semiconductor interface commonly observed in metal-oxide-semiconductor (MOS) devices. From the large anomalous Hall effect measured in these films, we observed that the holes at the interface were strongly spin polarized. Structure and magnetotransport properties suggested that these PLD films have potential spintronics applications.
- Publication:
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Journal of Physics Condensed Matter
- Pub Date:
- May 2008
- DOI:
- 10.1088/0953-8984/20/19/195206
- arXiv:
- arXiv:0801.1285
- Bibcode:
- 2008JPCM...20s5206Y
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Other Condensed Matter
- E-Print:
- 6 pages in Latex including 8 figures