An Extended Huckel Theory based Atomistic Model for Graphene Nanoelectronics
Abstract
An atomistic model based on the spin-restricted extended Huckel theory (EHT) is presented for simulating electronic structure and I-V characteristics of graphene devices. The model is applied to zigzag and armchair graphene nano-ribbons (GNR) with and without hydrogen passivation, as well as for bilayer graphene. Further calculations are presented for electric fields in the nano-ribbon width direction and in the bilayer direction to show electronic structure modification. Finally, the EHT Hamiltonian and NEGF (Nonequilibrium Green's function) formalism are used for a paramagnetic zigzag GNR to show 2e2/h quantum conductance.
- Publication:
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arXiv e-prints
- Pub Date:
- January 2008
- DOI:
- 10.48550/arXiv.0801.1125
- arXiv:
- arXiv:0801.1125
- Bibcode:
- 2008arXiv0801.1125R
- Keywords:
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- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 8 figures