Magnetic properties of HfO2 thin films
Abstract
We report on the magnetic and transport studies of hafnium oxide thin films grown by pulsed-laser deposition on sapphire substrates under different oxygen pressures, ranging from 10-7 to 10-1 mbar. Some physical properties of these thin films appear to depend on the oxygen pressure during growth: the film grown at low oxygen pressure (P≈10-7 mbar) has a metallic aspect and is conducting, with a positive Hall signal, while those grown under higher oxygen pressures (7 × 10-5<=P<=0.4 mbar) are insulating. However, no intrinsic ferromagnetic signal could be attributed to the HfO2 films, irrespective of the oxygen pressure during the deposition.
- Publication:
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Journal of Physics Condensed Matter
- Pub Date:
- December 2007
- DOI:
- 10.1088/0953-8984/19/48/486206
- arXiv:
- arXiv:0712.2410
- Bibcode:
- 2007JPCM...19V6206H
- Keywords:
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- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 12