Polariton light-emitting diode in a GaAs-based microcavity
Abstract
Cavity polaritons have been shown these last years to exhibit a rich variety of nonlinear behaviors which could be used in new polariton based devices. Operation in the strong coupling regime under electrical injection remains a key step toward a practical polariton device. We report here on the realization of a polariton based light-emitting diode using a GaAs microcavity with doped Bragg mirrors. Both photocurrent and electroluminescence spectra are governed by cavity polaritons up to 100K .
- Publication:
-
Physical Review B
- Pub Date:
- March 2008
- DOI:
- 10.1103/PhysRevB.77.113303
- arXiv:
- arXiv:0712.1565
- Bibcode:
- 2008PhRvB..77k3303B
- Keywords:
-
- 73.50.Pz;
- 78.55.Cr;
- 78.60.Fi;
- 71.36.+c;
- Photoconduction and photovoltaic effects;
- III-V semiconductors;
- Electroluminescence;
- Polaritons;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages 3 figures