Making a field effect transistor on a single graphene nanoribbon by selective doping
Abstract
Using first-principles electronic structure calculations, we show a metal-semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of nitrogen or boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principles quantum transport calculations.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2007
- DOI:
- 10.1063/1.2826547
- arXiv:
- arXiv:0711.0787
- Bibcode:
- 2007ApPhL..91y3122H
- Keywords:
-
- 85.30.Tv;
- 85.35.-p;
- 85.40.Ry;
- Field effect devices;
- Nanoelectronic devices;
- Impurity doping diffusion and ion implantation technology;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 3 figures. Accepted in APL