Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells
Abstract
The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
- Publication:
-
Acta Physica Polonica A
- Pub Date:
- March 2008
- DOI:
- 10.12693/APhysPolA.113.909
- arXiv:
- arXiv:0711.0438
- Bibcode:
- 2008AcPPA.113..909S
- Keywords:
-
- Condensed Matter - Materials Science;
- Condensed Matter - Other
- E-Print:
- 4 pages, 2 figures