Disorder and temperature dependence of the anomalous Hall effect in thin ferromagnetic films: Microscopic model
Abstract
We consider the anomalous Hall (AH) effect in thin disordered ferromagnetic films. Using a microscopic model of electrons in a random potential of identical impurities including spin-orbit coupling, we develop a general formulation for strong, finite range impurity scattering. Explicit calculations are done within a short range but strong impurity scattering to obtain AH conductivities for both the skew scattering and side-jump mechanisms. We also evaluate quantum corrections due to interactions and weak localization effects. We show that for arbitrary strength of the impurity scattering, the electron-electron interaction correction to the AH conductivity vanishes exactly due to general symmetry reasons. On the other hand, we find that our explicit evaluation of the weak localization corrections within the strong, short-range impurity scattering model can explain the experimentally observed logarithmic temperature dependences in disordered ferromagnetic Fe films.
- Publication:
-
Physical Review B
- Pub Date:
- December 2007
- DOI:
- 10.1103/PhysRevB.76.214415
- arXiv:
- arXiv:0710.5416
- Bibcode:
- 2007PhRvB..76u4415M
- Keywords:
-
- 75.50.Cc;
- 73.20.Fz;
- 72.10.Fk;
- 72.15.Rn;
- Other ferromagnetic metals and alloys;
- Weak or Anderson localization;
- Scattering by point defects dislocations surfaces and other imperfections;
- Localization effects;
- Condensed Matter - Disordered Systems and Neural Networks
- E-Print:
- to be published in Phys. Rev. B