Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films
Abstract
We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [refer to J. Y. Jo et al., Phys. Rev. Lett. 99, 267602 (2007)]. Based on this analysis, we found that the Zr ion substitution for Ti ions would induce broad distributions in the local field due to defect dipoles, which makes the ferroelectric domain switching occur more easily.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2008
- DOI:
- 10.1063/1.2824839
- arXiv:
- arXiv:0710.4178
- Bibcode:
- 2008ApPhL..92a2917J
- Keywords:
-
- 77.55.+f;
- 77.80.Fm;
- 77.80.Dj;
- Dielectric thin films;
- Switching phenomena;
- Domain structure;
- hysteresis;
- Condensed Matter - Materials Science
- E-Print:
- 7 pages, 3 figures