Control of the Casimir force by the modification of dielectric properties with light
Abstract
The experimental demonstration of the modification of the Casimir force [Proc. K. Ned. Akad. Wet. 51, 793 (1948)] between a gold coated sphere and a single-crystal Si membrane by light pulses is performed. The specially designed and fabricated Si membrane was irradiated with 514nm laser pulses of 5ms width in high vacuum, leading to a change of the charge-carrier density. The difference in the Casimir force in the presence and in the absence of laser radiation was measured by means of an atomic force microscope as a function of separation at different powers of the absorbed light. The total experimental error of the measured force differences at a separation of 100nm varies from 10% to 20% in different measurements. The experimental results are compared with theoretical computations using the Lifshitz theory [Zh. Eksp. Teor. Fiz. 29, 94 (1956) [Sov. Phys. JETP 2, 73 (1956)]; Statistical Physics (Pergamon, Oxford, 1981), Pt. II] at both zero and laboratory temperatures. The total theoretical error determined mostly by the uncertainty in the concentration of charge carriers when the light is incident is found to be about 14% at separations less than 140nm . The experimental data are consistent with the Lifshitz theory at laboratory temperature, if the static dielectric permittivity of high-resistivity Si in the absence of light is assumed to be finite. If the dc conductivity of high-resistivity Si in the absence of light is included into the model of dielectric response, the Lifshitz theory at nonzero temperature is shown to be experimentally inconsistent at 95% confidence. The demonstrated phenomenon of the modification of the Casimir force through a change of the charge-carrier density is topical for applications of the Lifshitz theory to real materials in fields ranging from nanotechnology and condensed matter physics to the theory of fundamental interactions.
- Publication:
-
Physical Review B
- Pub Date:
- July 2007
- DOI:
- 10.1103/PhysRevB.76.035338
- arXiv:
- arXiv:0707.4390
- Bibcode:
- 2007PhRvB..76c5338C
- Keywords:
-
- 72.20.Jv;
- 78.20.Ci;
- 72.80.Ey;
- 85.85.+j;
- Charge carriers: generation recombination lifetime and trapping;
- Optical constants;
- III-V and II-VI semiconductors;
- Micro- and nano-electromechanical systems and devices;
- Condensed Matter - Statistical Mechanics;
- Quantum Physics
- E-Print:
- 30 pages, 10 figures, 2 tables