Carrier-carrier entanglement and transport resonances in semiconductor quantum dots
Abstract
We study theoretically the entanglement created in a scattering between an electron, incoming from a source lead, and another electron bound in the ground state of a quantum dot, connected to two leads. We analyze the role played by the different kinds of resonances in the transmission spectra and by the number of scattering channels, into the amount of quantum correlations between the two identical carriers. It is shown that the entanglement between their energy states is not sensitive to the presence of Breit-Wigner resonances, while it presents a peculiar behavior in correspondence to Fano peaks: two close maxima separated by a minimum for a two-channel scattering and a single maximum for a multichannel scattering. Such a behavior is ascribed to the different mechanisms characterizing the two types of resonances. Our results suggest that the production and detection of entanglement in quantum dot structures may be controlled by the manipulation of Fano resonances through external fields.
- Publication:
-
Physical Review B
- Pub Date:
- November 2007
- DOI:
- 10.1103/PhysRevB.76.195317
- arXiv:
- arXiv:0706.2312
- Bibcode:
- 2007PhRvB..76s5317B
- Keywords:
-
- 73.63.-b;
- 03.67.Mn;
- 03.65.Ud;
- Electronic transport in nanoscale materials and structures;
- Entanglement production characterization and manipulation;
- Entanglement and quantum nonlocality;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Quantum Physics
- E-Print:
- 8 pages, 6 figures, RevTex4 two-column format, submitted