Anisotropic low-temperature piezoresistance in (311)A GaAs two-dimensional holes
Abstract
The authors report low-temperature resistance measurements in a modulation-doped, (311)A GaAs two-dimensional hole system as a function of applied in-plane strain. The data reveal a strong but anisotropic piezoresistance whose magnitude depends on the density as well as the direction along which the resistance is measured. At a density of 1.6×1011cm-2 and for a strain of about 2×10-4 applied along the [011¯], e.g., the resistance measured along this direction changes by nearly a factor of 2, while the resistance change in the [2¯33] direction is less than 10% and has the opposite sign. The accurate energy band calculations indicate a pronounced and anisotropic deformation of the heavy-hole dispersion with strain, qualitatively consistent with the experimental data. The extremely anisotropic magnitude of the piezoresistance, however, lacks a quantitative explanation.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2007
- DOI:
- 10.1063/1.2753735
- arXiv:
- arXiv:0706.0736
- Bibcode:
- 2007ApPhL..91a2107H
- Keywords:
-
- 72.20.Fr;
- 72.80.Ey;
- Low-field transport and mobility;
- piezoresistance;
- III-V and II-VI semiconductors;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages. Submitted to Applied Physics Letters