Spin Diode Based on Fe/MgO Double Tunnel Junction
Abstract
We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic.
- Publication:
-
Nano Letters
- Pub Date:
- March 2008
- DOI:
- 10.1021/nl072676z
- arXiv:
- arXiv:0705.2375
- Bibcode:
- 2008NanoL...8..805I
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 14 pages