Theory of superfast fronts of impact ionization in semiconductor structures
Abstract
We present an analytical theory for impact ionization fronts in reversely biased p+-n-n+ structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a dense electron-hole plasma and in this way switches the structure from low to high conductivity. For a planar front we determine the concentration of the generated plasma, the maximum electric field, the front width, and the voltage over the n base as functions of front velocity and doping of the n base. The theory takes into account that drift velocities and impact ionization coefficients differ between electrons and holes, and it makes quantitative predictions for any semiconductor material possible.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- August 2007
- DOI:
- 10.1063/1.2767378
- arXiv:
- arXiv:0705.2028
- Bibcode:
- 2007JAP...102c4508R
- Keywords:
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- Condensed Matter - Materials Science;
- Nonlinear Sciences - Pattern Formation and Solitons
- E-Print:
- 18 pagers, 10 figures