Magnetotransport properties of strained Ga0.95Mn0.05As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory
Abstract
The magnitude of the anisotropic magnetoresistance (AMR) and the longitudinal resistance in compressively strained Ga0.95Mn0.05As epilayers were measured down to temperatures as low as 30mK . Below temperatures of 3K , the conductivity decreases ∝T1/3 over 2 orders of magnitude in temperature. The conductivity can be well described within the framework of a three-dimensional scaling theory of Anderson’s transition in the presence of spin scattering in semiconductors. It is shown that the samples are on the metallic side but very close to the metal-insulator transition. At lowest temperatures, a decrease in the AMR effect is observed, which is assigned to changes in the coupling between the remaining itinerant carriers and the local Mn 5/2 -spin moments.
- Publication:
-
Physical Review B
- Pub Date:
- June 2007
- DOI:
- 10.1103/PhysRevB.75.245310
- arXiv:
- arXiv:0705.0121
- Bibcode:
- 2007PhRvB..75x5310H
- Keywords:
-
- 85.75.-d;
- 71.30.+h;
- 72.20.My;
- 75.47.-m;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Metal-insulator transitions and other electronic transitions;
- Galvanomagnetic and other magnetotransport effects;
- Magnetotransport phenomena;
- materials for magnetotransport;
- Condensed Matter - Other Condensed Matter
- E-Print:
- 6 pages, 6 figures