Roughness of undoped graphene and its short-range induced gauge field
Abstract
We present both numerical and analytical studies of graphene roughness with a crystal structure including 500×500 atoms. The roughness can effectively result in a random gauge field and has important consequences for its electronic structure. Our results show that its height fluctuations in small scales have a scaling behavior with a temperature dependent roughness exponent in the interval of 0.6<χ<0.7 . The correlation function of height fluctuations depends on temperature with a characteristic length scale of ≈90Å (at room temperature). We show that the correlation function of the induced gauge field has a short-range nature with a correlation length of about ≃2-3Å . We also treat the problem analytically by using the Martin-Siggia-Rose method. The renormalization group flows did not yield any delocalized-localized transition arising from the graphene roughness. Our results are in good agreement with recent experimental observations.
- Publication:
-
Physical Review B
- Pub Date:
- November 2007
- DOI:
- 10.1103/PhysRevB.76.195407
- arXiv:
- arXiv:0705.0103
- Bibcode:
- 2007PhRvB..76s5407A
- Keywords:
-
- 68.35.Ct;
- 71.15.Pd;
- 89.75.Da;
- Interface structure and roughness;
- Molecular dynamics calculations and other numerical simulations;
- Systems obeying scaling laws;
- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 5 Pages, 5 figures