35% magnetocurrent with spin transport through Si
Abstract
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically dead" silicide (where strong spin scattering significantly reduces injected spin polarization) is eliminated by moving the FM in the spin injector from the tunnel junction base anode to the emitter cathode and away from the silicon surface. This results in over an order-of-magnitude increase in spin injection efficiency, from a previously reported magnetocurrent ratio of ≈2% to ≈35% and an estimated spin polarization in Si from ≈1% to at least ≈15%. The injector tunnel junction bias dependence of this spin transport signal is also measured, demonstrating the importance of low bias voltage to preserve high injected spin polarization.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2007
- DOI:
- 10.1063/1.2767198
- arXiv:
- arXiv:0704.3949
- Bibcode:
- 2007ApPhL..91e2501H
- Keywords:
-
- 72.25.Dc;
- 72.20.My;
- 72.80.Cw;
- Spin polarized transport in semiconductors;
- Galvanomagnetic and other magnetotransport effects;
- Elemental semiconductors;
- Condensed Matter - Materials Science;
- Condensed Matter - Other Condensed Matter
- E-Print:
- Appl. Phys. Lett. 91, 052501 (2007)