Phenethylammonium bromide addition for high luminance and efficiency perovskite light-emitting diodes

The luminance and efficiency of perovskite light-emitting diodes are strongly limited by the strongly nonradiative losses in the light emission layers. Herein, we report that phenethylammonium bromide addition can effectively modify the perovskite layer with efficient light emission, which is related to the morphology improvement induced defect healing-, dielectric and size confinement-, or defect passivation-suppressed nonradiative losses. The modified perovskite lightemitting diodes show a maximum luminance of 61800 cd m-2 and current efficiency of 41.8 cd A^-1.