Mottness in two-dimensional van der Waals Nb3X8 monolayers (X =Cl ,Br ,andI )
Abstract
We investigate strong electron-electron correlation effects on two-dimensional van der Waals materials Nb3X8 (X =Cl ,Br ,andI ). We find that the monolayers Nb3X8 are ideal systems close to the strong correlation limit. They can be described by a half-filled single band Hubbard model in which the ratio between the Hubbard, U , and the bandwidth, W , U /W ≈5 -10 . Both Mott and magnetic transitions of the material are calculated by the slave boson mean-field theory. Doping the Mott state, a dx2−y2+i dx y superconducting pairing instability is found. We also construct a tunable bilayer Hubbard system for two sliding Nb3X8 layers. The bilayer system displays a crossover between the band insulator and Mott insulator.
- Publication:
-
Physical Review B
- Pub Date:
- January 2023
- DOI:
- 10.1103/PhysRevB.107.035126
- arXiv:
- arXiv:2207.01471
- Bibcode:
- 2023PhRvB.107c5126Z
- Keywords:
-
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 10 pages, 6 figures in the main text, and 4 pages, 2 figures in the supplemental material