Effect of elastic disorder on singleelectron transport through a buckled nanotube
Abstract
We study transport properties of a single electron transistor based on elastic nanotube. Assuming that an external compressive force is applied to the nanotube, we focus on the vicinity of the Euler buckling instability. We demonstrate that in this regime the transport through the transistor is extremely sensitive to elastic disorder. In particular, builtin curvature (random or regular) leads to the "elastic curvature blockade": appearance of threshold bias voltage in the I V curve which can be larger than the Coulombblockadeinduced one. In the case of a random curvature, an additional plateau in the dependence of the average current on a bias voltage appears.
 Publication:

Physical Review Research
 Pub Date:
 January 2022
 DOI:
 10.1103/PhysRevResearch.4.013068
 arXiv:
 arXiv:2107.10887
 Bibcode:
 2022PhRvR...4a3068E
 Keywords:

 Condensed Matter  Mesoscale and Nanoscale Physics
 EPrint:
 16 LaTeX pages, 16 figures