Optimization of InGaAs/InAs photodetectors with superlattice electron barrier
Abstract
The photodetector with superlattice electron barrier has received great attention in the past few years. In this paper, a type of photodetector with superlattice structure is simulated. InGaAs/InAs superlattices are inserted into the intrinsic layer of the PIN structure, and the positions of the superlattices are optimized. After changing the position of the superlattice, the dark current was reduced from 6.42 × 10-5 A/cm2 to 3.02 × 10-5 A/cm2. The results show that placing the superlattice on top of the intrinsic layer can minimize the dark current of the photodetector. Similarly, after changing the number of superlattice layers, the dark current is reduced from 6.42 × 10-5 A/cm2 to 1.55 × 10-5 A/cm2. In addition, the thickness of the superlattice was optimized, and the dark current was reduced from 6.42 × 10-5 A/cm2 to 3.1 × 10-5 A/cm2.
- Publication:
-
Superlattices and Microstructures
- Pub Date:
- August 2021
- DOI:
- 10.1016/j.spmi.2021.106927
- Bibcode:
- 2021SuMi..15606927C
- Keywords:
-
- Superlattice;
- Electric field;
- Photodetectors;
- Transport barrier