Tensoresistive properties of single crystals TlIn1−xGaxSe2

In this work, single crystals of TlIn1−xGaxSe₂ solid solutions were grown by the methods of zone recrystallization, technologies for the manufacture of strain gauges based on them were developed and the tensoresistive properties of these phases were studied, the coefficient of strain sensitivity was determined by the static method depending on the temperature, the magnitude of mechanical deformation and optical illumination. Revealing that the single crystals have a high strain sensitivity coefficient, by the variation of the composition, quantity of mechanical deformation and the optical illumination, it is possible to control the phase coefficients investigated tensosensitivity.