(Invited) Developments in Vertical GaN p-n Junction Structures Via p-Type Ion Implantation
Abstract
Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. Silicon is now used for most power switches, but silicon-based devices lose efficiency under high power demands. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of reduced size and weight systems. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers with an emphasis on x-ray scattering and electron microscopy measurements.
- Publication:
-
ECS Meeting Abstracts
- Pub Date:
- October 2021
- DOI:
- 10.1149/MA2021-02341000mtgabs
- Bibcode:
- 2021ECSMA2021.1000G