Coherent growth and characterization of van der Waals 1 T -VSe2 layers on GaAs(111)B using molecular beam epitaxy
Abstract
We report epitaxial growth of vanadium diselenide (VSe2 ) thin films in the octahedrally coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy, and x-ray photoelectron spectroscopy indicate high-quality thin films. Further studies show that monolayer VSe2 films on GaAs are not air stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe2 , a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for two- and three-dimensional hybrid devices.
- Publication:
-
Physical Review Materials
- Pub Date:
- August 2020
- DOI:
- 10.1103/PhysRevMaterials.4.084002
- arXiv:
- arXiv:2004.05506
- Bibcode:
- 2020PhRvM...4h4002Z
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 14 pages, 4 figures