Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications
Abstract
We present a 1 Mpixel single-photon avalanche diode camera featuring 3.8 ns time gating and 24 kfps frame rate, fabricated in 180 nm CMOS image sensor technology. We designed two pixels with a pitch of 9.4 µm in 7 T and 5.75 T configurations respectively, achieving a maximum fill factor of 13.4%. The maximum photon detection probability is 27%, median dark count rate is 2.0 cps, variation in gating length is 120 ps, position skew is 410 ps, and rise/fall time is < 550 p s , all FWHM at 3.3 V excess bias. The sensor was used to capture 2D/3D scenes over 2 m with resolution (least significant bit) of 5.4 mm and precision better than 7.8 mm (rms). We demonstrate extended dynamic range in dual exposure operation mode and show spatially overlapped multi-object detection in single-photon time-gated time-of-flight experiments.
- Publication:
-
Optica
- Pub Date:
- April 2020
- DOI:
- 10.1364/OPTICA.386574
- arXiv:
- arXiv:1912.12910
- Bibcode:
- 2020Optic...7..346M
- Keywords:
-
- Electrical Engineering and Systems Science - Image and Video Processing;
- Physics - Instrumentation and Detectors
- E-Print:
- 11 pages, 15 figures