Pulse measurements of small area thin film μc-Si:H/ZnO:B photodiodes
Abstract
We introduce a triggered optoelectronic system operating in a pulse mode in the near infrared and visible spectral range 0.75- eV. The system measures current-voltage (I-V) characteristics in dark and under visible light illumination as well as electroluminescence (EL) spectra of small area thin film photodiodes and light emitting diodes with size below 1 mm2. The usefulness of the setup is demonstrated by measurement of optoelectronic properties of a hydrogenated microcrystalline silicon μc-Si:H)p-i-n diode deposited on a semi-transparent nanostructured ZnO:B electrode. No s-shaped I-Vcharacteristics were observed under white illumination near an open circuit voltage Uoc indicating a negligible charge accumulation near μc-Si:H/ZnO:B interface. The weak infrared EL correlates with the current density.
- Publication:
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Materials Science and Engineering Conference Series
- Pub Date:
- January 2020
- DOI:
- 10.1088/1757-899X/726/1/012011
- Bibcode:
- 2020MS&E..726a2011R