Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch
Abstract
This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode. The extraction method for the proposed model is developed. A 2-gate switch structure is fabricated on a commercial 0.5 μm AlGaAs/GaAs pHEMT technology to verify the proposed model. Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.
- Publication:
-
Journal of Semiconductors
- Pub Date:
- March 2020
- DOI:
- 10.1088/1674-4926/41/3/032102
- Bibcode:
- 2020JSemi..41c2102L
- Keywords:
-
- GaAs pHEMTs;
- switch;
- small-signal model;
- parameter extraction