Kinetically stabilized high-temperature InN growth
Abstract
We report on indium nitride growth on sapphire substrates by migration-enhanced plasma-assisted metal organic chemical vapor deposition (MEPA-MOCVD). The growth is studied in the temperature range from 700 °C to 957 °C, well above the decomposition temperature of indium nitride in conventional MOCVD. Raman spectroscopy, atomic force microscopy, and X-ray diffraction indicate polycrystalline grainy InN film growth.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- April 2020
- DOI:
- 10.1016/j.jcrysgro.2020.125574
- Bibcode:
- 2020JCrGr.53625574C
- Keywords:
-
- B2. Semiconducting indium compounds;
- B2. Semiconducting III-V materials;
- A3. Migration enhanced epitaxy;
- A3. Metalorganic chemical vapor deposition;
- B1. Nitrides