Performance projection of high-voltage, quasi-lateral diamond MOSFET for power electronics applications
Abstract
We propose and report on the performance projection of high-voltage, quasi-lateral diamond power MOSFETs with numerical simulations. The novel diamond MOSFET utilizes a lateral 2 dimensional hole gas (2DHG) channel, an extended lateral drift region for voltage blocking and vertical metal vias to connect to the backside metal. Evaluated specific on-resistance (RON,sp) of 3.3 kV, 5 kV and 10 kV rating devices are 2.8 mΩ-cm2, 4.7 mΩ-cm2 and 23.7 mΩ-cm2, which are 1.3×, 1.6× and 1.9× lower than gallium nitride vertical device 1D Ron,sp limit at the same breakdown voltage (BV). Simulated BVs are 4.2 kV, 5.6 kV and 11.1 kV, respectively, contributed by the source-connected field plates which spread out the electric field distribution.
- Publication:
-
Diamond and Related Materials
- Pub Date:
- April 2020
- DOI:
- 10.1016/j.diamond.2020.107741
- Bibcode:
- 2020DRM...10407741G
- Keywords:
-
- Diamond;
- Quasi-lateral MOSFET;
- High-voltage;
- Vertical metal via;
- Field plates;
- Specific on-resistance