On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer - NASA/ADS

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On the origin of enhanced hole injection for AlGaN-based deep ultraviolet light-emitting diodes with AlN insertion layer in p-electron blocking layer

Publication:: Optics Express
Pub Date:: June 2019
DOI:: 10.1364/OE.27.00A620
Bibcode:: 2019OExpr..27A.620C

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