Electron beam processing of 6H-SiC substrate to obtain graphene-like carbon films

We report on growth of graphene-like carbon films on 6H-SiC {0001} substrate by electron-beam. The processing was carried out on a specialized electron beam system with the Pierce electron gun. The D, G, and 2D peaks as well as D/G (0.2-0.9) and 2D/G (0.7-0.9) ratios are detected on processed samples by Raman spectroscopy. The prominent bands D, G, and 2D are located at 1350, 1584, and 2707 cm^-1, respectively. Atomic force microscopy showed that the average roughness lies in the range from 5 to 30 nm, and ten point height - from 40 to 200 nm. The results demonstrate that the electron-beam technique is appropriate to form graphene-like structures directly on 6H-SiC substrates and could be used for electronic device fabrication.