Observation of sharp emission lines from Zn-doped GaN
Abstract
We report the observation and characterization of sharp emission lines from Zn-related emission centers in GaN. Initial studies on the emission lines show that they appear only at low temperatures (T < 50 K), are energetically stable, and exhibit linewidths of a few meV. A brief discussion on their possible origins is given.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- June 2019
- DOI:
- 10.7567/1347-4065/ab0cff
- Bibcode:
- 2019JaJAP..58CCB15G