Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-n Photodiodes by Layer Exfoliation and Nanosecond-Pulse Laser Annealing
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- March 2019
- DOI:
- 10.1109/TED.2019.2893273
- Bibcode:
- 2019ITED...66.1353K