Electrical current switching of the noncollinear antiferromagnet Mn3GaN

We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn₃GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of 1.5 × 10⁶ A/cm², whereas no significant change is observed up to ∼10⁸ A/cm² in Mn₃GaN single films, indicating that the Pt layer plays an important role. In comparison with ferrimagnetic Mn₃GaN/Pt bilayers, a lower electrical current switching of noncollinear AFM Mn₃GaN is demonstrated, with a critical current density two orders of magnitude smaller. Our results highlight that a combination of a noncollinear AFM antiperovskite nitride and a spin-torque technique is a good platform for AFM spintronics.