Ferroelectric properties of ion-irradiated bismuth ferrite layers grown via molecular-beam epitaxy

We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite Bi_xFe_2-xO₃ layers grown on SrRuO₃-coated DyScO₃(110)_o substrates using adsorption-controlled ozone molecular-beam epitaxy. Our findings highlight ion irradiation as an effective approach for reducing through-layer electrical leakage, a necessary condition for the development of reliable ferroelectrics-based electronics.