Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures - NASA/ADS

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Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures

Publication:: Semiconductors
Pub Date:: February 2018
DOI:: 10.1134/S1063782618020203
Bibcode:: 2018Semic..52..242T

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