Monte Carlo analysis of the oxygen knock-on effects induced by synchrotron x-ray radiation in the B i2S r2CaC u2O8 +δ superconductor
We investigate the microscopic mechanism responsible for the change of macroscopic electrical properties of the B i2S r2CaC u2O8 +δ high-temperature superconductor induced by intense synchrotron hard x-ray beams. The possible effects of secondary electrons on the oxygen content via the knock-on interaction are studied by Monte Carlo simulations. The change in the oxygen content expected from the knock-on model is computed convoluting the fluence of photogenerated electrons in the material with the Seitz-Koehler cross section. This approach has been adopted to analyze several experimental irradiation sessions with increasing x-ray fluences. A close comparison between the expected variations in oxygen content and the experimental results allows determining the irradiation regime in which the knock-on mechanism can satisfactorily explain the observed changes. Finally, we estimate the threshold displacement energy of loosely bound oxygen atoms in this material Td=0 .15-0.01+0.025eV .