Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO2 interface
Abstract
Silicon carbide (SiC)-based metal-oxide-semiconductor devices suffer from carrier mobility degradation due to defects at the SiC/SiO2 interface. The carbon-related defects Si2>C=O and Si2>C=C<Si2 are thought to be possible origins of the defect levels. We studied the electronic structures of 4H-SiC(0001)/SiO2 interfaces with C=O and C=C defects by first-principles calculations based on hybrid density functional theory. We found that their defect levels are strongly affected by the local structures around the C=O and C=C groups, and the defect levels form a broad state distribution.
- Publication:
-
Applied Physics Express
- Pub Date:
- January 2018
- DOI:
- 10.7567/APEX.11.011302
- Bibcode:
- 2018APExp..11a1302K