Direct comparison of fractional and integer quantized Hall resistance
Abstract
We present precision measurements of the fractional quantized Hall effect, where the quantized resistance {{R}^{≤ft[ 1/3 \right]}} in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance {{R}^{[2]}} , represented by an integer quantum Hall state at filling factor 2. A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directly compare two resistance values of two GaAsbased devices located in two cryostats. A value of 1(5.3 ± 6.3) 10^{8} (95% confidence level) was obtained for the ratio ({{R}^{≤ft[ 1/3 \right]}}/6{{R}^{[2]}} ). This constitutes the most precise comparison of integer resistance quantization (in terms of h/e ^{2}) in singleparticle systems and of fractional quantization in fractionally charged quasiparticle systems. While not relevant for practical metrology, such a test of the validity of the underlying physics is of significance in the context of the upcoming revision of the SI.
 Publication:

Metrologia
 Pub Date:
 August 2017
 DOI:
 10.1088/16817575/aa75d4
 arXiv:
 arXiv:1703.05213
 Bibcode:
 2017Metro..54..516A
 Keywords:

 Condensed Matter  Mesoscale and Nanoscale Physics
 EPrint:
 doi:10.1088/16817575/aa75d4