In this paper, we study the Schottky transport in a narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly nonparabolic. We propose that the contrasting current-temperature scaling relation of J ∝T2 in the conventional Schottky interface and J ∝T3 in graphene-based Schottky interface can be reconciled under Kane's k .p nonparabolic band model for narrow-gap semiconductors. Our model suggests a more general form of J ∝(T2+γ kBT3) , where the nonparabolicty parameter γ provides a smooth transition from T2 to T3 scaling. For few-layer graphene, we find that N -layer graphene with A B C stacking follows J ∝T2 /N +1 , while A B A stacking follows a universal form of J ∝T3 regardless of the number of layers. Intriguingly, the Richardson constant extracted from the Arrhenius plot using an incorrect scaling relation disagrees with the actual value by 2 orders of magnitude, suggesting that correct models must be used in order to extract important properties for many Schottky devices.