Influence of chip temperature on the hydrogen sensitivity of MISFET-based sensors
Abstract
The chip temperature influence on the hydrogen sensitivity of the metal-insulator- semiconductor field-effect transistor (MISFET) with structure Pd-Ta2O5-SiO2-Si was investigated. MISFET sensing element was integrated on silicon chip together with (p-n)- junction temperature sensor and heater-resistor. There were measured the hydrogen responses of the MISFET threshold voltage for room and higher chip temperatures. The threshold voltage VT as a function of hydrogen concentration C was determined for different temperatures T. The models of hydrogen and temperature sensitivities based on the experimental dependencies of VT (C, T) are presented in this work.
- Publication:
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Materials Science and Engineering Conference Series
- Pub Date:
- October 2016
- DOI:
- 10.1088/1757-899X/151/1/012007
- Bibcode:
- 2016MS&E..151a2007P