Self-aligned formation of the trench bottom shielding region in 4H-SiC trench gate MOSFET
Abstract
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- April 2016
- DOI:
- 10.7567/JJAP.55.04ER02
- Bibcode:
- 2016JaJAP..55dER02K