Semiconductor diode detectors coated with neutron reactive materials are generally fashioned as planar diodes coated with 10B, 6LiF, or Gd. Planar detectors coated with 10B or 6LiF are limited to less than 5% intrinsic thermal neutron detection efficiency. Detectors coated with Gd can achieve higher efficiencies, but the low-energy signatures are problematic in the presence of background radiations. Microstructured semiconductor neutron detectors (MSNDs) can now achieve a tenfold increase in neutron detection efficiency over the planar diode designs. These semiconductor neutron detectors are fashioned with a matrix of microstructured patterns etched deeply into the semiconductor substrate and, subsequently, backfilled with neutron reactive materials. Intrinsic thermal-neutron detection efficiencies exceeding 35% have been achieved with devices no thicker than 1 mm while operating on less than 5 V, now allowing for instrumentation to be realized with similar performance as 3He gas-filled detectors.