Parallel Hall effect from three-dimensional single-component metamaterials
Abstract
We propose a class of three-dimensional metamaterial architectures composed of a single doped semiconductor (e.g., n-Si) in air or vacuum which lead to an unusual effective behavior of the classical Hall effect. Using an anisotropic structure, we numerically demonstrate a Hall voltage that is parallel—rather than orthogonal—to the external static magnetic-field vector ("parallel Hall effect"). The sign of this parallel Hall voltage can be determined by a structure parameter. Together with the previously demonstrated positive or negative orthogonal Hall voltage, we demonstrate four different sign combinations.
- Publication:
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Applied Physics Letters
- Pub Date:
- September 2015
- DOI:
- 10.1063/1.4932046
- arXiv:
- arXiv:1507.04128
- Bibcode:
- 2015ApPhL.107m2103K
- Keywords:
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- Physics - Classical Physics;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1063/1.4932046