Parallel Hall effect from threedimensional singlecomponent metamaterials
Abstract
We propose a class of threedimensional metamaterial architectures composed of a single doped semiconductor (e.g., nSi) in air or vacuum which lead to an unusual effective behavior of the classical Hall effect. Using an anisotropic structure, we numerically demonstrate a Hall voltage that is parallel—rather than orthogonal—to the external static magneticfield vector ("parallel Hall effect"). The sign of this parallel Hall voltage can be determined by a structure parameter. Together with the previously demonstrated positive or negative orthogonal Hall voltage, we demonstrate four different sign combinations.
 Publication:

Applied Physics Letters
 Pub Date:
 September 2015
 DOI:
 10.1063/1.4932046
 arXiv:
 arXiv:1507.04128
 Bibcode:
 2015ApPhL.107m2103K
 Keywords:

 Physics  Classical Physics;
 Condensed Matter  Materials Science
 EPrint:
 doi:10.1063/1.4932046