Hall field-induced resistance oscillations in a p-type Ge/SiGe quantum well

We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high-frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hall field-induced resistance oscillations (HIRO) which are known to occur in 2D electron gases in GaAs/AlGaAs systems. After taking into account the Dingle factor correction, we find that the position of the HIRO peak is well described by the hole effective mass m≈0.09m₀, obtained from microwave photoresistance in the same sample.