We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high-frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hall field-induced resistance oscillations (HIRO) which are known to occur in 2D electron gases in GaAs/AlGaAs systems. After taking into account the Dingle factor correction, we find that the position of the HIRO peak is well described by the hole effective mass m≈0.09m0, obtained from microwave photoresistance in the same sample.
Physical Review B
- Pub Date:
- October 2014
- Electronic transport in interface structures;
- Electron states and collective excitations in multilayers quantum wells mesoscopic and nanoscale systems;
- Quantum Hall effects;
- Condensed Matter - Mesoscale and Nanoscale Physics