Interferenceinduced magnetoresistance in HgTe quantum wells
Abstract
We study the quantum interference correction to the conductivity in HgTe quantum wells using the BernevigHughesZhang model. This model consists of two independent species (blocks) of massive Dirac fermions. We describe the crossover between the orthogonal and symplectic classes with increasing the carrier concentration and calculate, respectively, weak localization and antilocalization corrections in the absence of the block mixing and assuming the whitenoise disorder within each block. We have calculated the interferenceinduced magnetoresistance in a wide interval of magnetic fields, in particular, beyond the diffusion regime. Remarkably, each Dirac cone taken separately gives a linear contribution to the lowfield magnetoresistance, which turns out to be asymmetric in magnetic field B. We present an interpretation of this result in terms of the Berryphase formalism. The contributions of the two blocks are related to each other by replacing B to B, so that the total magnetoresistance is symmetric and parabolic in the limit B →0. However, in some range of parameters, field dependence turns out to be strongly nonmonotonous. We also demonstrate that block mixing gives rise to additional singular diffusive modes which do not show up in the absence of mixing.
 Publication:

Physical Review B
 Pub Date:
 August 2014
 DOI:
 10.1103/PhysRevB.90.085401
 arXiv:
 arXiv:1402.7097
 Bibcode:
 2014PhRvB..90h5401G
 Keywords:

 73.20.Fz;
 72.20.Dp;
 75.47.m;
 Weak or Anderson localization;
 General theory scattering mechanisms;
 Magnetotransport phenomena;
 materials for magnetotransport;
 Condensed Matter  Mesoscale and Nanoscale Physics
 EPrint:
 32 pages, 20 figures